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savantic semiconductor product specification silicon pnp power transistors 2SB974 d escription with ito-220 package darlington high dc current gain low collector saturation voltage applications low frequency power amplification low speed power switching applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -100 v v ceo collector-emitter voltage open base -100 v v ebo emitter-base voltage open collector -5 v i c collector current -5 a t c =25 30 p c collector power dissipation t a =25 1.5 w t j junction temperature 150 t stg storage temperature -55~150 downloaded from: http:///
savantic semiconductor product specification 2 silicon pnp power transistors 2SB974 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =-30ma ;i b =0 -100 v v (br)cbo collector-base breakdown voltage i c =-1ma ;i e =0 -100 v v (br)ebo emitter-base breakdown voltage i e =-5ma ;i c =0 -5 v v cesat collector-emitter saturation voltage i c =-2a; i b =-2ma -1.5 v v besat base-emitter saturation voltage i c =-2a; i b =-2ma -2.0 v i cbo collector cut-off current v cb =-100v; i e =0 -1 a i ceo collector cut-off current v ce =-50v; i b =0 -100 a i ebo emitter cut-off current v eb =-5v; i c =0 -5.0 ma h fe dc current gain i c =-2a ; v ce =-2v 2000 20000 downloaded from: http:///
savantic semiconductor product specification 3 silicon pnp power transistors 2SB974 package outline fig.2 outline dimensions (unindicated tolerance:0.20 mm) downloaded from: http:///

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